STM32F303RBT7 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM32F303RBT7

ARM Cortex-M4F 32b MCU+FPU, up to 256KB Flash+48KB SRAM 4 ADCs, 2 DAC ch., 7 comp, 4 PGA, timers, 2.0-3.6 V operation

STMicroelectronics 

Electrical characteristics

STM32F302xx/STM32F303xx

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

Table 48. EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs. [fHSE/fHCLK]

8/72 MHz

Unit

SEMI

Peak level

VDD = 3.3 V, TA = 25 °C,

LQFP100 package

compliant with IEC

61967-2

0.1 to 30 MHz

30 to 130 MHz

130 MHz to 1GHz

SAE EMI Level

7

20

dBµV

27

4

-

6.3.12

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Table 49. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class Maximum value(1) Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C, conforming

to JESD22-A114

2

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA = +25 °C, conforming

to JESD22-C101

II

2000

V

500

1. Data based on characterization results, not tested in production.

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Doc ID 023353 Rev 5

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