SD106WS View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
| SD106WS Datasheet PDF : 0 Pages | |||
Small Signal Schottky Diode
SD106WS
Vishay Semiconductors
Features
• Low turn-on voltage
• Fast switching
• This device is protected by a PN junction
e3
guard ring against excessive voltage,
such as electrostatic discharge
• Ideal for precaution of MOS devices, steering,
biasing, and coupling diodes for fast switching and
low logic level application
• Microminiature plastic package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-323 Plastic case
Weight: approx. 5.0 mg
Packaging Codes/options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
SD106WS
Ordering code
SD106WS-GS18 or SD106WS-GS08
17431
Type Marking
S2
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Forward current
Forward surge current
Power dissipation
tp = 10 ms
TC = 25 °C
1) Valid provided that electrodes are kept at ambient temperature.
Symbol
VR
IF
IFSM
Ptot
Value
30
200
1.0
2501)
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Test condition
Junction temperature
Storage temperature range
1) Valid provided that electrodes are kept at ambient temperature.
Symbol
RthJA
Tj
Tstg
Value
5001)
125
- 65 to + 125
Unit
V
mA
A
mW
Unit
K/W
°C
°C
Document Number 85685
Rev. 1.3, 12-Dec-05
www.vishay.com
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