SD106WS View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
| SD106WS Datasheet PDF : 0 Pages | |||
SD106WS
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
IR = 100 µA
VR = 30 V
IF = 2.0 mA
IF = 15 mA
IF = 100 mA
IF = 200 mA
VR = 10 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VR
30
V
IR
5.0
µA
VF
260
mW
VF
320
mW
VF
420
mW
VF
490
550
mW
Ctot
15
pF
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
Tamb = 125 °C
100
10
40 °C
1
25 °C
0.1
0.01
0
18501
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
45
40
35
30
25
20
15
10
5
0
0
18503
4 8 12 16 20 24 28
VR - Reverse Voltage (V)
Figure 3. Typical Capacitance °C vs. Reverse Applied Voltage VR
1000
100
10
1
Tamb = 125 °C
100 °C
75 °C
50 °C
0.1
25 °C
0.01
0
18502
5 10 15 20 25 30
VR - Reverse Voltage (V)
Figure 2. Typical Variation of Reverse Current at Various
Temperatures
www.vishay.com
2
Document Number 85685
Rev. 1.3, 12-Dec-05
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