STPS1L30M(2003) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS1L30M Datasheet PDF : 5 Pages
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STPS1L30M
Fig. 1: Conduction losses versus average current.
PF(AV)(W)
0.50
0.45
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
0.40
δ=1
0.35
0.30
0.25
0.20
0.15
T
0.10
0.05
IF(AV)(A)
δ=tp/T
tp
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5)
IF(AV)(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
Rth(j-a)=Rth(j-c)
Rth(j-a)=270°C/W
Tamb(°C)
50
75
100
125
150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100
1000
0
25
50
75
100
125
150
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
22
20
18
16
14
12
10
8
6
4 IM
2
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
TC=25°C
TC=75°C
TC=125°C
1.E+00
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1 Single pulse
0.0
1.E-04
1.E-03
tP(s)
T
1.E-02
δ=tp/T
tp
1.E-01
3/5
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