STPS1L30M View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS1L30M

LOW DROP POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS1L30M

Figure 3: Normalized avalanche power

derating versus pulse duration

PARM(tp)

PARM(1µs)

1

0.1

0.01

0.001

0.01

0.1

tp(µs)

1

10

100

1000

Figure 4: Normalized avalanche power

derating versus junction temperature

PARM(tp)

PARM(25°C)

1.2

1

0.8

0.6

0.4

0.2

0

25

50

Tj(°C)

75

100

125

150

Figure 5: Non repetitive surge peak forward

current versus overload duration (maximum

values)

IM(A)

22

20

18

16

14

12

10

8

6

4 IM

2

0

1.E-03

t

δ=0.5

1.E-02

t(s)

1.E-01

TC=25°C

TC=75°C

TC=125°C

1.E+00

Figure 6: Relative variation of thermal

impedance junction to ambient versus pulse

duration

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1 Single pulse

0.0

1.E-04

1.E-03

tp(s)

T

1.E-02

δ=tp/T

tp

1.E-01

Figure 7: Reverse leakage current versus

reverse voltage applied (typical values)

IR(mA)

1.E+03

1.E+02

1.E+01

1.E+00

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

1.E-01

Tj=25°C

1.E-02

VR(V)

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

Figure 8: Reverse leakage current versus

junction temperature (typical values)

IR(mA)

1.E+03

VR=30V

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

0

Tj(°C)

25

50

75

100

125

150

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