MB84VD22182EG View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MB84VD22182EG

32M (× 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM

Fujitsu 

MB84VD2218XEG/EH/2219XEG/EH-90

• Write Cycle (Note 3) (WE control) (SRAM)

tWC

Address

tAS

WE

CE1s

tWP

tWR

tAW

tCW

CE2s

tCW

LBs, UBs

tBW

tODW

tOEW

DOUT

Note 1

tDS

tDH

Note 2

DIN

Note 4

VALID DATA IN

Note 4

Notes: 1. If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the

output will remain at high impedance.

2. If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the

output will remain at high impedance.

3. If OE is HIGH during the write cycle, the outputs will remain at high impedance.

4. Because I/O signals may be in the output state at this time, input signals of reverse

polarity must not be applied.

55

Share Link: