2SC2248 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC2248 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustainig Voltage lc= 50mA; L= 25mH
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
hFE
DC Current Gain
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
lc= 3A; VCE= 5V
VCB= 450V; IE= 0
TC=125"C
VCE= 400V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC=3A; IB1=- \BI= 0.6A
2SC2248
MIN TYP. MAX UNIT
400
V
1.2
V
1.5
V
10
1.0
mA
4.0
5,0
mA
1.0
mA
1.0
us
2.0
Ms
1.0
us
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