SD103AWS View Datasheet(PDF) - Diode Semiconductor Korea

Part Name

Description

Manufacturer

SD103AWS

Schottky Barrier Diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

Schottky Barrier Diode SD103AWS/SD103BWS/SD103CWS

Parameter

Reverse Breakdown Voltage SD103AWS

SD103BWS

SD103CWS

Symbol

V(BR)R

Min.

40

30

20

Typ.

Forward voltage

VF

Reverse current

SD103AWS

SD103BWS IRM

SD103CWS

Junction Capacitance

CJ

50

Reverse Recovery Time

trr

10

Max. Unit

V

0.37

V

0.60

5.0 μA

pF

ns

Conditions

IR=10μA

IR=10μA

IR=10μA

IF=20mA

IF=200mA

VR=30V

VR=20V

VR=10V

VR=0,f=1MHz

IR=IF=200mA

Irr=0.1*IR,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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