AM1011-400 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

AM1011-400

RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

STMicroelectronics 

AM1011-400

RF & MICROWAVE TRANSISTORS

L-BAND AVIONICS APPLICATIONS

........ REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

15:1 VSWR CAPABILITY

LOW THERMAL RESISTANCE

INPUT/OUTPUT MATCHING

OVERLAY GEOMETRY

METAL/CERAMIC HERMETIC PACKAGE

POUT = 400 W MIN. WITH 8.0 dB GAIN

.400 x .500 2LFL (S038)

hermetically sealed

ORDER CODE

AM1011-400

BRANDING

1011-400

DESCRIPTION

The AM1011-400 device is a high power Class

C transistor specifically designed for TCAS and

Mode-S pulsed output and driver applications.

This device is designed for operation under moder-

ate pulse width and duty cycle pulse conditions

and is capable of withstanding 15:1 output VSWR

at rated RF conditions. Low RF thermal resistance

and computerized automatic wire bonding tech-

niques ensure high reliability and product consist-

ency.

The AM1011-400 is supplied in the BIGPAC™ Her-

metic Metal/Ceramic package Input/Output match-

ing structures.

PIN CONNECTION

1. Collector

2. Base

3. Emitter

4. Base

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symb ol

PDISS

IC

VCC

TJ

TSTG

Pa ra met er

Power Dissipation* (TC ≤ 100°C)

Device Current*

Collector-Supply Voltage*

Junction Temperature (Pulsed RF Operation)

Storage Temperature

Value

Unit

880

W

24

A

55

V

250

°C

− 65 to +200

°C

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

0.17

°C/W

September 1992

1/6

Share Link: