STPS20L25CT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS20L25CT Datasheet PDF : 5 Pages
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STPS20L25CT/CG
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c) Junction to case
Per diode
Total
Rth (c)
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Value
1.5
0.8
0.1
Unit
°C/W
Symbol
Tests conditions
Tests conditions
Min. Typ. Max. Unit
IR * Reverse leakage current Tj = 25°C
VR = VRRM
Tj = 125°C
800 µA
125 250 mA
VF * Forward voltage drop
Tj = 25°C
IF = 10 A
0.46 V
Tj = 125°C
Tj = 25°C
IF = 10 A
IF = 20 A
0.30 0.35
0.56
Pulse test: * tp = 380 µs, δ < 2%
Tj = 125°C IF = 20 A
0.41 0.48
To evaluate the maximum conduction losses use the following equation :
P = 0.22 x IF(AV) + 0.013 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature ( δ = 0.5).
PF(av)(W)
5
δ = 0.05
4
δ = 0.1
δ = 0.2
3
δ = 0.5
δ=1
IF(av)(A)
12
10
8
6
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
2
T
1
IF(av) (A)
δ=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11
4
T
2
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
100
125
150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
0
Tj(°C)
25
50
75
100
125
150
2/5
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