2SK2415-Z-E2(JM) View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SK2415-Z-E2(JM) Datasheet PDF : 7 Pages
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2SK2415,2415-Z
ELECTRICAL CHARACTERISTICS (TA = 25˚C)
CHARACTERISTIC
Drain to Source On-state Resistance
Gate Cut-off Voltage
Forward Transfer Admittance
Zero Gate Voltage Drain Current
Gate Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
1.0
5.0
TYP.
0.07
0.10
1.6
8.4
570
290
75
5
60
75
40
21
2.0
6.5
1.0
85
200
MAX.
0.10
0.15
2.0
10
±10
UNIT
Ω
Ω
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITIONS
VGS = 10 V, ID = 4.0 A
VGS = 4 V, ID = 4.0 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 4.0 A
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V
VGS = 0 V
f = 1 MHz
ID = 4.0 A
VGS = 10 V
VDD = 30 V
RG = 10 Ω
ID = 8.0 A
VDD = 48 V
VGS = 10 V
IF = 8.0 A, VGS = 0 V
IF = 8.0 A, VGS = 0 V
di/dt = 100 A/µs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VGS
90%
ID
90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
Data Sheet D13207EJ2V0DS
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