BUX23 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BUX23 Datasheet PDF : 2 Pages
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BUX23
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise stated)
Parameter
Test Conditions
Min.
Collector - Emitter Breakdown
\/ ,-pr*'Qfj •
Ir- = 0.2mA
325
" '~A ' Voltage
•:.'
VEBO
'CEO
Emitter - BaseVoltage
Collector Cut-off Current
IE = 50mA
VCE = 260V
VCE = 400V
lc = 0
7
lB = o
VBE=-1.5V
ICEX
Collector Cut-off Current
VCE = 400V
VBE=-1.5V
Tc= 125"C
'EBO
VCE(satr
Emitter Cut-offCurrent
Collector - EmitterSaturation
Voltage
lc = o
IG =8A
IC = 16A
VEB =5V
I - 1.6A
IB = 3.2A
VBE(satr
Base - Emitter
Saturation Voltage
lc = 16A
IB = 3.2A
hrrr.L.
DC Current Gain
lc = 8A
IC = 16A
VCE = 4V
15
VCE = 4V
8
Second Breakdown
ktO' IJ
Collector Current
VCE = 1 40V
t = 1s
0.15
VCE = 16V
t = 1s
22
IT
Transition Frequency
IG = 2A
f = 10MHz
VCE = 15V
8
'on
Turn-On Time
ts
Storage Time
tf
Fall Time
IC = 16A
IC = 16A
IB2 = -3.2A
IlD-j —_Oo./_O/~A\B1 -3.2A
Typ.
0.2
0.35
1.15
0.55
1.7
0.26
Max. Unit
V
V
3
mA
3
12
mA
1.0
mA
0.8
V
1 .0
1.5
V
60
—
A
MHz
1.3
MS
2.5
1.2
THERMAL CHARACTERISTICS
R
Thermal Resistance Junction to Case
* Pulse test tD = 300ns , 5 = 1.5 %
0.5
"C/W
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