DC and AC parameters
M27W801
Table 6. Capacitance(1) (2)
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN = 0V
COUT
Output Capacitance
VOUT = 0V
1. TA = 25 °C, f = 1 MHz
2. Sampled only, not 100% tested.
Table 7. Read mode DC characteristics(1) (2)
6
pF
12
pF
Symbol
Parameter
Test Condition
Min
Max Unit
ILI Input Leakage Current
0V ≤VIN ≤VCC
±10
µA
ILO Output Leakage Current
0V ≤VOUT ≤VCC
±10
µA
ICC Supply Current
E = VIL, GVPP = VIL,
IOUT = 0mA,
f = 5MHz, VCC ≤3.6V
15
mA
ICC1 Supply Current (Standby) TTL
E = VIH
1
mA
ICC2 Supply Current (Standby) CMOS
E > VCC – 0.2V,
VCC ≤3.6V
30
µA
IPP Program Current
VPP = VCC
10
µA
VIL
VIH(3)
Input Low Voltage
Input High Voltage
–0.6 0.2 VCC V
0.7 VCC VCC + 0.5 V
VOL Output Low Voltage
IOL = 2.1mA
0.4
V
VOH Output High Voltage TTL
IOH = –1mA
2.4
V
1. TA = –40 to 85 °C; VCC = 2.7V to 3.6V; VPP = VCC
2. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
3. Maximum DC voltage on Output is VCC +0.5V.
Table 8. Programming mode DC characteristics(1) (2)
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI Input Leakage Current
VIL ≤VIN ≤VIH
±10
µA
ICC Supply Current
50
mA
IPP Program Current
E = VIL
50
mA
VIL Input Low Voltage
–0.3
0.8
V
VIH Input High Voltage
2
VCC + 0.5
V
VOL Output Low Voltage
IOL = 2.1mA
0.4
V
VOH Output High Voltage TTL
IOH = –1mA
3.6
V
VID A9 Voltage
11.5
12.5
V
1. TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V
2. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
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