DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STPS1L20M(2004) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPS1L20M
(Rev.:2004)
ST-Microelectronics
STMicroelectronics 
STPS1L20M Datasheet PDF : 6 Pages
1 2 3 4 5 6
STPS1L20M
Table 4: Thermal Resistance
Symbol
Rth(j-c)* Junction to case
Rth(j-l)* Junction to ambient
Parameter
* Mounted with minimum recommended pad size, PC board FR4.
Value
20
250
Table 5: Static Electrical Characteristics
Symbol
Parameter
Tests conditions
Tj = 25°C
Tj = 85°C
VR = VRRM
IR *
Tj = 25°C
Reverse leakage current
Tj = 85°C
VR = 10V
Tj = 25°C VR = 5V
Tj = 85°C
VF * Forward voltage drop
Tj = 25°C
Tj = 85°C
Tj = 25°C
Tj = 85°C
IF = 1A
IF = 3A
Min.
Typ Max.
0.015 0.075
0.9 4.5
0.005 0.035
0.45 2.5
0.003 0.025
0.3 1.6
0.38 0.43
0.32 0.37
0.46 0.53
0.42 0.49
Pulse test:
* tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.34 x IF(AV) + 0.07 IF2(RMS)
Unit
°C/W
°C/W
Unit
mA
V
Figure 1: Conduction losses versus average
current
PF(AV)(W)
0.50
0.45
0.40
0.35
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
0.30
0.25
0.20
0.15
T
0.10
0.05
IF(AV)(A)
δ=tp/T
tp
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
IF(AV)(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
Rth(j-a)=Rth(j-c)
Rth(j-a)=270°C/W
Tamb(°C)
50
75
100
125
150
2/6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]