MLN1027SL(RevA) View Datasheet(PDF) - Advanced Semiconductor
Part Name
Description
Manufacturer
MLN1027SL Datasheet PDF : 1 Pages
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MLN1027SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1027SL is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
0.250 A
VCBO
40 V
VCEO
28 V
VEBO
PDISS
TJ
TSTG
θJC
3.5 V
7.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
25 OC/W
PACKAGE STYLE .280 4L PILL
A
S
ØB
D
G
S
ØC
D
EF
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
C
.275 / 6.99
D
.004 / 0.10
E
.050 / 1.27
F
.118 / 3.00
MAXIMUM
inches / mm
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
ORDER CODE: ASI10620
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCEO
IC = 1.0 mA
BVEBO
IE = 1.0 mA
ICBO
VCB = 24 V
hFE
VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
40
28
3.5
0.5
20
120
UNITS
V
V
V
mA
---
COB
VCB = 28 V
f = 1.0 MHz
3.5
pF
PG
VCE = 20 V
POUT = 0.5 W
ICQ = 100 mA
f = 1.0 GHz
9.0
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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