2SC4442 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC4442 Datasheet PDF : 2 Pages
| |||
, (inc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
2SC4442
DESCRIPTION
• Collector-Base Breakdown Voltage-
: V(BR)CBo= 500V(Min.)
• Wide Area of Safe Operation
• High Speed Switching
APPLICATIONS
• Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=2S'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCES Collector-Emitter Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25"C
PC
Collector Power Dissipation
@TC=25°C
T,
Junction Temperature
Tstg
Storage Temperature Range
1.6
A
2
W
45
150
"C
-55-150 °c
2
uf
i1
.,23
<
3
"" 1.BASE
1. COLLECTOR
3. EMITTER
TO-220Fa package
tT^r^5*1—
*AU "
.;
f T~
•.
''
A
ff
•'
, i.
F
1'
i*
H
t
K
"'
*" r*~L
1^1. -^+\j
I
1
*— J
-*-R"
.*C.-
*N»
mm
DIM WIN MAX
A 16,35 17,15
B 9.90 10.10
C 4.35 4.65
D 0.75 0.30
F 3.20 3.40
G 6.90 7.10
H 5.15 5,45
J 0.45 0.75
K 1345 13.65
L 1.10 1,30
N 4.93 5.13
Q 435 5.15
R 2.95 3.25
S 2.70 2.90
u 1.75 2.05
V 1.30 1.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at ihe time ofguooiinngsi
to press. I lowever. NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Share Link: 