2SC4759 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC4759 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 5mA ; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage IC=7A;IB=1.7A
VBE(sat) Base-Emitter Saturation Voltage
lc=7A;le=1.7A
ICBO
Collector Cutoff Current
VCB= 1500V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V ; lc= 0
hpE-1
DC Current Gain
lc= 1A; VCE=5V
hFE-2
DC Current Gain
lc= 7A ; VCE= 5V
fr
Current-Gain—Bandwidth Product
^O.IAjVcE-lOV
COB
Output Capacitance
lE=0;VCB=10V;ftest=1.0MHz
Switching times, Resistive load
tstg
Storage Time
tf
Fall Time
lc=7A, IB1=1.4A;IB2=-2.8A
RL=30 n
2SC4759
MIN TYP. MAX UNIT
600
V
5.0
V
1.5
V
1.0 mA
10
uA
8
4
8
1
3
MHz
175
PF
2.5 u s
0.25 u s
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