SD103C-TAP(2010) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SD103C-TAP Datasheet PDF : 6 Pages
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SD103A, SD103B, SD103C
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Thermal resistance junction to ambient air
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Value
3101)
125
- 55 to + 150
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part Symbol Min.
Typ.
SD103A V(BR)
40
Reverse Breakdown Voltage
IR = 50 µA
SD103B V(BR)
30
SD103C V(BR)
20
VR = 30 V
SD103A
IR
Leakage current
VR = 20 V
SD103B
IR
VR = 10 V
SD103C
IR
Forward voltage drop
IF = 20 mA
VF
IF = 200 mA
VF
Diode capacitance
VR = 0 V, f = 1 MHz
CD
50
Reverse recovery time
IF = IR = 50 to 200 mA,
recover to 0.1 IR
trr
10
Unit
K/W
°C
°C
Max.
Unit
V
V
V
5
µA
5
µA
5
µA
370
mV
600
mV
pF
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
100
10
1
0.1
0.01
0.001
0 100 200 300 400 500 600 700 800 900 1000
16765
VF - Forward Voltage (mV)
Figure 1. Forward Current vs. Forward Voltage
5
4
3
2
1
0
0.0
16766
0.5
1.0
1.5
2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85754
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.6, 23-Jul-10
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