2N6231 View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
2N6231 Datasheet PDF : 2 Pages
| |||
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·High DC Current Gain-hFE=25-60(Min)@IC= 5A
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC = 7.5A
·Complement to Type 2N6231
APPLICATIONS
·Designed for high power amplifier and switching applications
where high voltages are required.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation @TC=25℃ 150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
SPTECH website：www.superic-tech.com
2N5634
1
Share Link: 