2N6231 View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
2N6231 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7.5A; IB= 0.75A
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 2V
ICEO
Collector Cutoff Current
VCE= 70V; IB= 0
ICBO
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 140V; IE= 0
VCE= 140V; VBE(off)= 1.5V
VCE= 140V; VBE(off)= 1.5V,TC=150℃
VEB= 7.0V; IC= 0
hFE-1
DC Current Gain
IC= 5A ; VCE= 2V
hFE-2
DC Current Gain
IC= 10A ; VCE= 2V
fT
Current Gain-Bandwidth Product
IC= 1A ; VCE= 20V;f= 0.5MHz
COB
Output Capacitance
IE= 0; VCB= 10V; f= 0.1MHz
2N5634
MIN MAX UNIT
140
V
1.0
V
2.0
V
2.0
V
1.5
V
1.0 mA
1.0 mA
1.0
5.0
mA
1.0 mA
15
60
5
1.0
MHz
300 pF
SPTECH website：www.superic-tech.com
2
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