2N3715 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2N3715 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
2N3715/3716
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
2N3715
2N3716
IC= 50mA ; IB= 0
60
V
80
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
0.8
V
1.5
V
VBE(on)
ICEX
IEBO
Base-Emitter On Voltage
IC= 3A ; VCE= 2V
Collector Cutoff Current
2N3715
2N3716
VCE= 80V; VBE(off)= -1.5V
VCE= 60V; VBE(off)= -1.5V, TC=150℃
VCE= 100V; VBE(off)= -1.5V
VCE= 80V; VBE(off)= -1.5V, TC=150℃
Emitter Cutoff Current
VEB= 7V; IC= 0
1.5
V
1.0
10
mA
1.0
10
5.0 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
50
150
hFE-2
DC Current Gain
IC= 3A ; VCE= 2V
30
fT
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V ;ftest= 1.0MHz
4
MHz
Switching Times
tr
Rise Time
tstg
Storage Time
IC= 5A; IB1= -IB2= 0.5A
0.45
μs
0.3
μs
tf
Fall Time
0.4
μs
SPTECH website：www.superic-tech.com
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