2N3226 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N3226

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Excellent Safe Operating Area

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.0 V(Max)@ IC = 3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 35V(Min)

APPLICATIONS

·Designed for power amplifier and switching circuits

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

35

V

VCEO

Collector-Emitter Voltage

35

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

PC

Collector Power Dissipation@TC=25℃

75

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.17 ℃/W

SPTECH website：www.superic-tech.com

2N3226

1

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