2N3226 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N3226 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
Tc=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA ; IB= 0
VcE(sat)-i Collector-Emitter Saturation Voltage lc= 3A; IB= 0.3A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 5A; IB= 1A
VsE(on) Base-Emitter On Voltage
lc= 3A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 35V; IB= 0
ICBO
Collector Cutoff Current
VCB= 35V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc=1A;VCE=4V
hpE-2
DC Current Gain
lc= 3A ; VCE= 4V
2N3226
WIN MAX UNIT
35
V
1.0
V
2.0
V
2.0
V
1.0
mA
0.1
mA
0.1
mA
40
20
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