2N6029 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2N6029 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A; IB= -4A
VBE(sat) Base-Emitter Saturation Voltage
IC= -10A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -8A ; VCE= -2V
ICEO
Collector Cutoff Current
VCE= -100V; IB= 0
ICBO
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= -100V; IE= 0
VCE= -100V; VBE(off)= -1.5V
VCE= -100V; VBE(off)= -1.5V,TC=150℃
VEB= -7.0V; IC= 0
hFE-1
DC Current Gain
IC= -8A ; VCE= -2V
hFE-2
DC Current Gain
IC= -16A ; VCE= -2V
fT
Current Gain-Bandwidth Product
IC= -1A ; VCE= -20V;f= 0.5MHz
COB
Output Capacitance
IE= 0; VCB= -10V; f= 0.1MHz
2N6029
MIN MAX UNIT
-100
V
-1.0
V
-2.0
V
-1.8
V
-1.5
V
-1.0 mA
-1.0 mA
-1.0
-5.0
mA
-1.0 mA
25 100
4
1.0
MHz
1000 pF
SPTECH website：www.superic-tech.com
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