2N3234 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N3234

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain-hFE= 18-55@ IC= 3A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 2.5V(Max)@ IC = 3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 160V(Min)

APPLICATIONS

·Designed for general purpose high power switch and

amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

7.5

A

PC

Collector Power Dissipation@TC=25℃ 117

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

1.5

℃/W

SPTECH website：www.superic-tech.com

2N3234

1

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