2N6475 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N6475

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -2A

VBE(on)-1 Base-Emitter On Voltage

IC= -1.5A; VCE= -4V

VBE(on)-2 Base-Emitter On Voltage

IC= -4A; VCE= 2.5V

ICEO

Collector Cutoff Current

VCE= -50V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -1.5A; VCE= -4V

hFE-2

DC Current Gain

IC= -4A; VCE= -2.5V

COB

Collector Output Capacitance

IE= 0; VCB= -10V, ftest= 1MHz

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -4V

2N6475

MIN MAX UNIT

-100

V

-1.2

V

-2.5

V

-2.0

V

-3.5

V

-1.0 mA

-1.0 mA

15

150

2

250

pF

5

MHz

SPTECH website：www.superic-tech.com

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