2N6254 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2N6254 Datasheet PDF : 2 Pages
| |||
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= 100Ω
VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 3A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 2V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 60V; IB= 0
VCE= 100V; VBE(off)= -1.5V
VCE= 100V; VBE(off)= -1.5V,TC=150℃
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 5A ; VCE= 2V
hFE-2
Is/b
DC Current Gain
Second Breakdown Collector
Current with Base Forward Biased
IC= 15A ; VCE= 4V
VCE= 80V, t= 1.0s, Nonrepetitive
2N6254
MIN MAX UNIT
80
V
85
V
90
V
0.5
V
4.0
V
1.5
V
1.0 mA
0.5
5.0
mA
0.5 mA
20
70
5
1.87
A
SPTECH website：www.superic-tech.com
2
Share Link: 