2N6486 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N6486

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC=5A; IB=0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC=15A; IB=5.0A

VBE(on)-1 Base-Emitter On Voltage

IC=5A; VCE=4V

VBE(on)-2 Base-Emitter On Voltage

IC=15A; VCE=4V

ICEO

Collector Cutoff Current

VCE= 20V; IB= 0

IEBO

Emitter Cutoff Current

VEB=5V; IC=0

hFE-1

DC Current Gain

IC=5A ; VCE=4V

hFE-2

DC Current Gain

IC=15A ; VCE=4V

fT

Current-Gain—Bandwidth Product

IC=1.0A ; VCE=4V,ftest=1.0MHz

2N6486

MIN MAX UNIT

40

V

1.3

V

3.5

V

1.3

V

3.5

V

1.0

mA

1.0

mA

20

150

5

5.0

MHz

SPTECH website：www.superic-tech.com

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