2N6283 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2N6283 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlingtion Power Transistor
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 750 (Min) @ IC =10 Adc
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)=80V(Min)
·Complement to type 2N6286
APPLICATIONS
·Intended for general purpose amplifier and low frequency
switching applications, such as linear and switching indu-
strial equipment.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current -Continuous
20
A
ICP
Collector Current-Peak
40
A
IB
Base Current
0.5
A
PC
Collector Power Dissipation@TC=25℃ 160
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.09
UNIT
℃/W
2N6283
SPTECH website：www.superic-tech.com
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