2N5840 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2N5840 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2N5840
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
350
V
VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; VBE= -1.5V
375
V
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; RBE≤50Ω
375
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 20mA ; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICEV
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 2A; IB= 0.2A
VCE=360V;VBE(off)=-1.5V
VCE=360V;VBE(off)=-1.5V;TC= 125℃
VCE= 300V; IB= 0
2.0
V
2.0
5.0
mA
2.0 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
20
hFE-2
DC Current Gain
IC= 2A ; VCE= 3V
10
50
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
150 pF
Switching Times
td
Delay Time
0.07
μs
tr
Rise Time
tstg
Storage Time
IC= 2A; IB1= -IB2= 0.2A; VCC= 200V
1.75 μs
3.0 μs
tf
Fall Time
1.5 μs
SPTECH website：www.superic-tech.com
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