2N5622 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N5622

Silicon NPN Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 10A; IB= 1A

ICEO

Collector Cutoff Current

VCE= 60V; IB= 0

ICBO

Collector Cutoff Current

VCB= 80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

hFE

DC Current Gain

IC= 5A ; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V

2N5622

MIN MAX UNIT

60

V

1.5

V

2.2

V

1.0

mA

0.1

mA

0.1

mA

70

200

40

MHz

SPTECH website：www.superic-tech.com

2

Share Link: