TIP151 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
TIP151 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
TIP151
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
350
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1.0mA, IE= 0
350
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A, IB= 10mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A, IB= 100mA
1.5
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A, IB= 250mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A, IB= 100mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 5A, IB= 250mA
VF
C-E Diode Forward Voltage
IF= 7A
2.0
V
2.2
V
2.3
V
3.5
V
ICEO
Collector Cutoff current
VCE= 350V, IB= 0
0.25 mA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
15
mA
hFE-1
DC Current Gain
IC= 2.5A; VCE= 5V
150
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
50
hFE-3
DC Current Gain
IC= 7A; VCE= 5V
15
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
150 pF
Switching Times
td
Delay Time
0.03
μs
tr
Rise Time
tstg
Storage Time
VCC = 250V, IC = 5.0 A,
0.18
μs
IB1= -IB2= 250mA; tp= 20μs
Duty Cycle≤2%
3.5
μs
tf
Fall Time
1.6
μs
SPTECH website：www.superic-tech.com
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