SL32-BL & SL34-BL
3.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Moisture Sensitivity Level 1
SMB-L PACKAGE
Package outline
SMB-L
.213(5.40)
.197(5.00)
.016(0.40)Typ.
.142(3.60)
.126(3.20)
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SMB-L
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.09 gram
.012(0.30)Typ.
.040(1.00) Typ.
.075(1.90)
.067(1.70)
.040(1.00) Typ.
Dimensions in inches and (millimeters)
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
Forward rectified current
See Fig.2
IO
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rate load (JEDEC methode)
80
A
Reverse current
Diode junction capacitance
Storage temperature
VR = VRRM TJ = 25OC
f=1MHz and applied 4V DC reverse voltage
IR
1.0 mA
CJ
300
pF
TSTG
-55
+150 OC
SYMBOLS
SL32-BL
SL34-BL
*1
VRRM
(V)
20
40
V
*
RMS
2
(V)
14
28
*3
VR
(V)
20
40
*4
VF
(V)
0.38
0.40
Operating
temperature
TJ, (OC)
-55 to +100
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
1
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