IRFZ34 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
IRFZ34 Datasheet PDF : 2 Pages
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THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
fyhJC
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°c/w
SPECIFICATIONS (Tj = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
AVDs/Tj
VGS(th)
IGSS
bss
RDS(on)
9fs
VGS = 0 V, ID = 250 uA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 uA
VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, T, = 150 °C
VGS = 10V
!D = 18Ab
VDS = 25V, ID= 18 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Ciss
CQSS
Crss
Qg
Qgs
Qgd
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
v _10V
ID = 30A, VDS = 48V,
see fig. 6 and 13b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 30 V, ID = 30 A,
Rg = 12fi, R D = 1.0 £J, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
Between lead,
LD
6 mm (0.25") from
/fi~"%
package and center of
(I NI T}
LS
die contact
V_^s
MIN. TYP. MAX. UNIT
60
-
-
V
-
0.065
-
v/°c
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
MA
-
-
250
-
-
0.050
Q.
9.3
-
-
S
-
1200
-
-
600
-
PF
-
100
-
-
-
46
-
-
11
nC
-
-
22
-
13
-
-
100
-
ns
-
29
-
-
52
-
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Is
MOSFET symbol
showing the
Pulsed Diode Forward Current"
ISM
p - n junction diode
-
-
n t~i\l reverse
-
-
30
A
120
Body Diode Voltage
VSD
Tj = 25 °C, ls = 30 A, VGS = 0 Vb
-
-
1.6
V
Body Diode Reverse Recovery Time
trr
-
T 9R °P 1 ^("1 A HI/Ht 1 HO A/no
120
230
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.7
1.4
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width < 300 us; duty cycle < 2 %.
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