SS8550 View Datasheet(PDF) - DC COMPONENTS
Part Name
Description
Manufacturer
SS8550 Datasheet PDF : 2 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
SS8550
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
Rating
Unit
VCBO
- 40
V
VCEO
-25
V
VEBO
-5
V
IC
-1.5
A
Base Current
IB
-500
mA
Total Power Dissipation
Total Power Dissipation(TC=25oC)
Junction Temperature
Storage Temperature
PD
PD
TJ
TSTG
1
W
2
W
+150
oC
-55 to +150 oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
5oTyp. 5oTyp. (1.0.2570)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO - 40
-
Collector-Emitter Breakdown Voltage BVCEO - 25
-
Emitter-Base Breakdown Volatge
BVEBO -5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage(1) VCE(sat)
-
-
Base-Emitter Saturation Voltage(1)
VBE(sat)
-
-
Base-Emitter On Voltage(1)
VBE(on)
-
-
DC Current Gain(1)
hFE1
45
-
hFE2
85
-
hFE3
40
-
Transition Frequency
fT
100
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
-0.1
- 0.1
- 0.5
- 1.2
-1
-
400
-
-
Classification of hFE2
Rank
B
C
Range
85~160
120~200
D
160~300
E
300~400
Unit
V
V
V
µA
µA
V
V
V
-
-
-
MHz
Test Conditions
IC=-100µA
IC=-2mA
IE=-100µA
VCB=-35V
VEB=-6V
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
IC=-10mA, VCE=-1V
IC=-5mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-800mA, VCE=-1V
IC=-50mA, VCE=-10V
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