BUV46AFI View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
BUV46AFI Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
BUV46AFI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
MIN TYP. MAX UNIT
450
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
Switching Times
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 2A; IB= 0.4A
VCE= 1000V; RBE=10Ω
VCE= 1000V; RBE=10Ω;TC=125℃
VCE= 1000V; VBE=-2.5V
VCE= 1000V; VBE=-2.5V;Tj= 125℃
VEB= 7V; IC= 0
IC= 2A; IB1= -IB2= 0.4A; VCC= 150V
1.3
V
0.1
1.0
mA
0.3
2.0
mA
1.0 mA
1.0 μs
3.0 μs
0.8 μs
SPTECH website：www.superic-tech.com
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