2SC2078 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC2078 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
lc=0.1mA; IB= 0
V(BR)CER Collector-Emitter Breakdown Voltage ' lc=1mA;RBE=150O
V(BR)EBO Emitter-Base Breakdown Voltage
lE=0.1mA; lc=0
VcE(sat) Collector-Emitter Saturation Voltage IC=1A; IB=0.1A
VsE(sat) Base-Emitter Saturation Voltage
lc=1A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 40V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; lc= 0
hFE
DC Current Gain
lc= 500mA ; VCE= 5V
COB
Output Capacitance
lE=0;VcB=10V;ftest= 1MHz
fi
Current-Gain—Bandwidth Product
lc= 500mA; VCE= 10V
Po
Output Power
n
Power Efficiency
Classifications
B
C
D
E
25-50 40-80 60-120 100-200
2SC2078
MIN TYP. MAX UNIT
80
V
75
V
5
V
0.6
V
1.2
V
10 u A
10
uA
25
200
45
60
PF
100
MHz
4.0
W
60
%
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