STP2NA50 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP2NA50 Datasheet PDF : 6 Pages
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STP2NA50/FI
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO 220
1.67
IS OW ATT 220
3. 57
62.5
0.5
300
oC/ W
oC/ W
oC/ W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E AS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
2.8
42
1.6
1.8
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Dr ain - s o ur c e
Breakdown Voltage
ID = 250 µA
VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0. 8 Tc = 125 oC
Gate-Source Leakage VGS = ± 30 V
Current (VDS = 0)
Min.
500
Typ .
M a x.
250
1000
100
Unit
V
µA
µA
mA
ON (∗)
Symb ol
V GS(th )
RDS( o n )
ID(o n)
P a ram et er
Test Conditions
Gate T hreshold Voltage VDS = VGS ID = 250 µA
St atic Drain-source On VGS = 10 V ID = 1. 4 A
Re s is ta nc e
VGS = 10 V ID = 1.4 A Tc = 100 oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2.25
2.8
Typ .
3
3.25
M a x.
3.75
4
8
Unit
V
Ω
Ω
A
DYNAMIC
Symb ol
gfs (∗)
Ciss
Coss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.4 A
Min.
0.8
Typ .
2
M a x.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
300 400 pF
55
70
pF
15
20
pF
2/6
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