2SC2502 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC2502 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.3A
VsE(sat) Base-Emitter Saturation Voltage
lc= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
ICEO
Collector Cutoff Current
VCE= 320V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; lc= 0
hpE-1
DC Current Gain
lc= 3A; VCE= 2V
hFE-2
DC Current Gain
lc= 6A; VCE= 2V
fi
Current-Gain—Bandwidth Product lc=06A;VCE=1QV;f= 1MHz
Switching times
'on
Turn-on Time
tstg
Storage Time
lc= 3A, IB1= -Is2= 0.6A
RL= 10n;Vcc=30V
tf
Fall Time
Pulso Tcst:Pulso Wi dth=3()()us, Duty Cuty Cycle<^. 0%
2SC2502
MIN TYP. MAX UNIT
400
V
0.7
V
1.5
V
100 u A
100 u A
1.0
mA
15
8
10
MHz
1.0
us
3.0
MS
0.7
Ms
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