2SC2502 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2SC2502 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
ICEO
Collector Cutoff Current
VCE= 320V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 2V
hFE-2
DC Current Gain
IC= 6A; VCE= 2V
fT
Current-Gain—Bandwidth Product IC= 0.6A; VCE= 10V; f= 1MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
IC= 3A, IB1= -IB2= 0.6A
RL= 10Ω; VCC= 30V
tf
Fall Time
Pulse Test:Pulse Width=300us,Duty Cuty Cycle<2.0%
2SC2502
MIN TYP. MAX UNIT
400
V
0.7
V
1.5
V
100 μA
100 μA
1.0 mA
15
8
10
MHz
1.0 μs
3.0 μs
0.7 μs
SPTECH website：www.superic-tech.com
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