2SD386 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2SD386

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 1A; IB= 0.1A

ICBO

Collector Cutoff Current

VCB= 180V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 0.5A; VCE= 2V

fT

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 5V

 hFE Classifications

C

D

E

F

40-80 60-120 100-200 160-320

2SD386

MIN TYP. MAX UNIT

120

V

1.0

V

1.8

V

1.0 mA

5.0 mA

40

320

8

MHz

SPTECH website：www.superic-tech.com

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