2SC4584 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC4584 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4584
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
At rated Voltage
IGEO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hpE-1
DC Current Gain
lc= 3A; VCE= 5V
hFE-2
DC Current Gain
fl
Current-Gain—Bandwidth Product
lc= 1mA; Vce= 5V
lc= 0.6A; VCE= 10V
Switching times
ton
Turn-on Time
Utg
Storage Time
tf
Fall Time
lc= 3A, IB1= 0.6A; IB2= -1 .2A;
RL=850;VBB2=4V
MIN TYP. MAX UNIT
800
V
1.0
V
1.5
V
100
nA
100 u A
100 u A
8
7
8
MHz
0.5
us
3.5
us
0.3
VS
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