2N7002KA View Datasheet(PDF) - Micro Commercial Components

Part Name

Description

Manufacturer

2N7002KA

N-Channel MOSFET

Micro Commercial Components 

MCC

R

Micro Commercial Components

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =48V,VGS = 0V

IGSS1

VGS =±20V, VDS = 0V

Gate-body leakage current

IGSS2

VGS =±10V, VDS = 0V

IGSS2

VGS =±5V, VDS = 0V

Gate threshold voltage*

VGS(th) VDS =VGS, ID =250µA

Drain-source on-resistance*

RDS(on)

VGS =10V, ID =500mA

VGS =4.5V, ID =200mA

Recovered charge

VGS=0V,IS=300mA,VR=25V,

Qr

dls/dt=-100A/µS

Dynamic characteristics**

Input Capacitance

Ciss

Output Capacitance

Coss

VDS=10V,VGS=0V,f=1MHz

Reverse Transfer Capacitance

Crss

Switching Characteristics**

Turn-on delay time

Turn-off delay time

td(on)

td(off)

VGS=10 V, VDD=50V, RG=50Ω

RGS=50Ω,RL=250Ω

Reverse recovery Time

VGS=0V,IS=300mA,VR=25V,

trr

dls/dt=-100A/µS

Source-Drain Diode characteristics

Diode Forward voltage

VSD

VGS =0V, IS=300mA

GATE-SOURCE ZENER DIODE

Gate-Source Breakdown Voltage

BVGSO IGS=±1mA(Open Drain)

Notes:

*Pulse Test: Pulse Width ≤300µs ，Duty Cycle ≤2%.

**These parameters have no way to verify.

Min Type Max Unit

60

V

1

µA

±10

µA

±200

nA

±100

nA

1

1.4 2.5

V

1.2

5

Ω

1.3 5.3

30

nC

40

30

pF

10

10

15

ns

30

±21.5

1.5

V

±30

V

Revision: A

www.mccsemi.com

2 of 4

2017/04/14

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