NXP Semiconductors
2N7002KA
N-channel TrenchMOS FET
3
VGS(th)
(V)
2
1
max
typ
min
003aab101
10-3
ID
(A)
10-4
10-5
003aab100
min
typ max
0
-60
0
60
120
180
Tj (°C)
10-6
0
1
2
3
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
1
IS
(A)
0.8
0.6
0.4
003aab356
102
C
(pF)
10
003aac035
Ciss
Coss
0.2
150 °C
Tj = 25 °C
0
0.2
0.4
0.6
0.8
1
VSD (V)
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 11. Source current as a function of source-drain
voltage; typical values
Crss
1
10−1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
2N7002KA_3
Product data sheet
Rev. 03 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
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