2N3904 View Datasheet(PDF) - DC COMPONENTS
Part Name
Description
Manufacturer
2N3904 Datasheet PDF : 1 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N3904
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and
amplifier applications.
TO-92
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
60
V
40
V
6
V
200
mA
625
mW
+150
oC
-55 to +150 oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ Max
Collector-Base Breakdown Volatge
BVCBO 60
-
-
Collector-Emitter Breakdown Voltage BVCEO 40
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICEX
-
-
50
Collector-Emitter Saturation Voltage(1) VCE(sat)1
-
VCE(sat)2
-
-
0.2
-
0.3
Base-Emitter Saturation Voltage(1)
VBE(sat)1 0.65
-
0.85
VBE(sat)2
-
-
0.95
hFE1
40
-
-
DC Current Gain(1)
hFE2
70
hFE3
100
-
-
-
300
hFE4
60
-
-
hFE5
30
-
-
Transition Frequency
fT
300
-
-
Output Capacitance
Cob
-
-
4
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCE=30V, VBE=3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=0.1mA, VCE=1V
IC=1mA, VCE=1V
IC=10mA, VCE=1V
IC=50mA, VCE=1V
IC=100mA, VCE=1V
IC=10mA, VCE=20V, f=100MHz
VCB=5V, f=1MHz, IE=0
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