DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TDA2822D(2003) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TDA2822D
(Rev.:2003)
ST-Microelectronics
STMicroelectronics 
TDA2822D Datasheet PDF : 6 Pages
1 2 3 4 5 6
TDA2822D
ELECTRICAL CHARACTERISTICS (VS = 6V; Tamb = 25°C, unless otherwise specified.
STEREO (Test circuit of fig. 1).
Symbol
VS
Id
VO
Parameter
Supply Voltage
Total Quiescent Drain Current
Quiescent Output Voltage
Ib
Input Bias Current
PO
Output Power (each channel)
(f = 1KHz, d = 10%)
d
Distortion
GV
Closed Loop Voltage Gain
GV
Channel Balance
Ri
Input Resistance
eN
Total Input Noise
SVR
Supply Voltage Rejection
Cs
Channel Separation
BRIDGE (Test circuit of fig.2)
Test Condition
Min.
1.8
VS = 3V
RL = 32
VS = 9V
VS = 6V
VS = 4.5V
VS = 3V
VS = 2V
RL = 16VS = 6V
170
RL = 8VS = 6V
300
RL = 4VS = 4.5V
VS = 3V
RL = 32PO = 40mW
RL = 16PO = 75mW
RL = 8PO = 150mW
f = 1KHz
36
f = 1KHz
100
Rs = 10kB = Curve A
Rs = 10kB = 22Hz to 22KHz
f = 100Hz C1 = C2 = 100µF 24
f = 1KHz
Typ.
2.7
1.2
100
300
120
60
20
5
220
380
320
110
0.2
0.2
0.2
39
2
2.5
30
50
Max.
15
15
41
±1
Unit
V
mA
V
V
nA
mW
mW
mW
mW
mW
%
%
%
dB
dB
K
µV
µV
dB
dB
VS
Id
Vos
Ib
PO
d
GV
Ri
eN
SVR
B
Supply Voltage
1.8
15
V
Total Quiescent Drain Current
Output Offset Voltage (between
the outputs)
RL =
RL = 8
15
mA
±80 mV
Input Bias Current
100
nA
Output Power
(f = 1KHz, d = 10%)
VS = 9V
1000
VS = 6V
320 400
RL = 32VS = 4.5V
200
mW
VS = 3V
50
65
VS = 2V
8
RL = 16VS = 6V
RL = 16W VS = 3V
800
mW
120
mW
RL = 8VS = 4.5V
RL = 8W VS = 3V
700
mW
220
mW
RL = 4VS = 3V
RL = 4W VS = 2V
350
mW
80
mW
Distortion
RL = 8PO = 0.5W f = 1KHz
0.2
%
Closed Loop Voltage Gain
f = 1KHz
39
dB
Input Resistance
f = 1KHz
100
K
Total Input Noise
Rs = 10kB = Curve A
2.5
µV
Rs = 10kB = 22Hz to 22KHz
3
µV
Supply Voltage Rejection
f = 100Hz
40
dB
Power Bandwidth (-3dB)
RL = 8PO = 1W
120
KHz
3/6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]