STP4NB50FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP4NB50FP Datasheet PDF : 7 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 250V, ID = 1.9 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 3.8 A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 400V, ID = 3.8 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 3.8 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3.8 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STP4NB50 - STP4NB50FP
Min. Typ. Max. Unit
11
ns
8
ns
15
21
nC
6.5
nC
5
nC
Min. Typ. Max. Unit
8
ns
5
ns
14
ns
Min. Typ. Max. Unit
3.8
A
15.2
A
1.6
V
245
ns
980
nC
9
A
3/7
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