STPS80L30CY(1999) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS80L30CY Datasheet PDF : 3 Pages
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STPS80L30CY
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
0.7
0.5
0.3
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR * Reverse leakage current
VF * Forward voltage drop
Pulse test : * tp = 380 µs, δ < 2%
Tests conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 40 A
Tj = 125°C IF = 40 A
Tj = 25°C
IF = 80 A
Tj = 125°C IF = 80 A
To evaluate the maximum conduction losses use the following equation :
P = 0.23 x IF(AV) + 0.0037 x IF2(RMS)
Min. Typ. Max. Unit
4
mA
0.7 1.5
A
0.48 V
0.34 0.38
0.58
0.48 0.53
2/3
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