STPS6030CW View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS6030CW

LOW DROP POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS6030CW

THERMAL RESISTANCES

Symbol

Rth(j-c) Junction to case

Rth(c)

Parameter

Per diode

Total

Coupling

Value

0.9

0.6

0.3

Unit

°C/W

°C/W

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

IR *

VF *

Parameter

Reverse leakage

current

Forward voltage drop

Pulse test : * tp = 380 *s, δ < 2%

Tests Conditions

Tj = 25°C

Tj = 125°C

VR = VRRM

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

IF = 30 A

IF = 30 A

IF = 60 A

IF = 60 A

To evaluate the conduction losses use the following equation :

P = 0.27 x IF(AV) + 0.006 IF2(RMS)

Min. Typ. Max. Unit

0.7 1.5 mA

200 400

0.46 0.52 V

0.39 0.45

0.58 0.65

0.56 0.63

Fig. 1: Conduction losses versus average current.

P(W)

22

20

18

16

14

12

10

8

6

4

2

0

0

5

δ = 0.05 δ = 0.1 δ = 0.2

δ = 0.5

δ=1

T

IF(av)(A)

δ=tp/T

tp

10

15

20

25

30

35

40

Fig. 2: Average forward current versus ambient

temperature(δ = 0.5).

IF(av)(A)

35

30

25

20

15

10

5

0

0

25

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C/W

Tamb(°C)

50

75

100

125

150

Fig. 3: Normalized avalanche power derating

versus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

PARM(tp)

PARM(1µs)

1

0.1

0.01

0.001

0.01

0.1

tp(µs)

1

10

PARM(tp)

PARM(25°C)

1.2

1

0.8

0.6

0.4

0.2

0

100

1000

0

Tj(°C)

25

50

75

100

125

150

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