STPS60L30CW View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS60L30CW Datasheet PDF : 4 Pages
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STPS60L30CW
THERMAL RESISTANCE
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
0.8
0.45
0.1
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Reverse leakage
current
Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 30 A
Tj = 125°C
IF = 30 A
Tj = 25°C
IF = 60 A
Tj = 125°C
IF = 60 A
Min. Typ. Max. Unit
4
mA
250 500 mA
0.46 V
0.33 0.38
0.55
0.45 0.5
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.26x IF(AV) + 0.004 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ=0.5) (per diode).
PF(av)(W)
18
IF(av)(A)
35
16
δ=0.2
δ=0.5
δ=1
30
14
δ=0.1
25
12
δ=0.05
10
20
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
8
15
6
T
10
T
4
2
IF(av) (A)
δ=tp/T
tp
5
δ=tp/T
tp
Tamb(°C)
0
0
0
5 10 15 20 25 30 35 40
0
25
50
75
100
125
150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
2/4
tp(µs)
1
10
100
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
0
Tj(°C)
25
50
75
100
125
150
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